Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation

نویسندگان

  • Alfredo Mameli
  • Yinghuan Kuang
  • Morteza Aghaee
  • Chaitanya K. Ande
  • Bora Karasulu
  • Mariadriana Creatore
  • Adriaan J. M. Mackus
  • Wilhelmus M. M. Kessels
  • Fred Roozeboom
چکیده

Printer for Local Area Activation Alfredo Mameli,*,† Yinghuan Kuang,† Morteza Aghaee,† Chaitanya K. Ande,† Bora Karasulu,† Mariadriana Creatore,† Adriaan J. M. Mackus,† Wilhelmus M. M. Kessels,† and Fred Roozeboom†,‡ †Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands ‡Department Thin Film Technology, TNO, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Indium-tris-guanidinates: a promising class of precursors for water assisted atomic layer deposition of In2O3 thin films.

Two closely related mononuclear homoleptic indium-tris-guanidinate complexes have been synthesized and characterized as precursors for atomic layer deposition (ALD) of In2O3. In a water assisted ALD process, high quality In2O3 thin films have been fabricated for the first time using the new class of precursors as revealed by the promising ALD growth characteristics and film properties.

متن کامل

Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle

Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies on the use of chemoselective inhibitor molecules in a three-step (ABC-type) ALD cycle. A process for area-selective ALD of SiO2 was developed compri...

متن کامل

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to character...

متن کامل

Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification

The suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. A feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. Physical vapor deposition (PVD) and pulsed plasma-enhanced chemical vapor deposition (PECVD), naturally, form asymmetric na...

متن کامل

Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociat...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 29  شماره 

صفحات  -

تاریخ انتشار 2017